transistor(npn) features ? genernal purpose amplifier m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 75 v v ceo collector - emitter voltage 30 v v ebo emitter - base voltage 6 v i c collector current 600 m a p c collector power dissipation 250 m w r ja thermal resistance from j u nction to a mbient 500 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 a , i e =0 75 v collector - emitter breakdown voltage v (br) c e o i c = 1 0 ma, i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 1 0 a , i c =0 6 v collector cut - off current i cbo v cb = 6 0 v, i e =0 10 n a collector cut - off current i c ex v c e = 30 v, v be(off) = 3v 10 n a emitter cut - off current i ebo v eb = 3 v, i c =0 0.1 a h fe (1) * v ce = 10 v, i c = 150m a 100 300 h fe (2) * v ce = 10 v, i c = 0.1m a 40 dc current gain h fe (3) * v ce = 10 v, i c = 500m a 42 collector - emitter saturation voltage v ce(sat) 1 * i c = 500m a, i b = 50 ma 1 v collector - emitter saturation voltage v ce(sat) 2 * i c = 150m a, i b = 15ma 0.3 v base - emitter saturation voltage v b e(sat) * i c = 500m a, i b = 50ma 1.2 v transition frequency f t v ce = 2 0 v,i c = 20 ma , f= 100m hz 300 mhz delay time t d 10 ns rise time t r v c c = 30 v, v be(off) = - 0. 5v i c = 150m a, i b 1 = 15ma 25 ns storage time t s 225 ns fall time t f v c c = 30 v, i c = 150m a, i b 1 = i b 2 =15ma 60 ns * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. classification of h fe ( 1 ) rank l h range 100 C 200 200 C 300 marking m1b so t C 23 1. base 2. emitter 3. collector MMBT2222 1 date:2011/05 www.htsemi.com semiconductor jinyu
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